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zmm 1...zmm75 silicon planar zener diodes in minimelf case especially for automatic insertion. the zener voltages are graded according to the international e 24 standard. smaller voltage tolerances and higher zener voltages are upon request. these diodes are also available in do-35 case with the type designation bzx55c... absolute maximum ratings (t a = 25 o c) symbol value unit power dissipation p tot 500 1) mw junction temperature t j 175 o c storage temperature range t s -55 to +175 o c 1) valid provided that electrodes are kept at ambient temperature characteristics at t amb = 25 o c symbol min. typ. max. unit thermal resistance junction to ambient air r tha - - 0.3 1) k/mw forward voltage at i f = 100ma v f - - 1 v 1) valid provided that electrodes are kept at ambient temperature ll-34 a ll data sheet.com
zmm 1...zmm75 z ener voltage range 1) dynamic resistance reverse leakage current temp coefficient of zener voltage l zt for v zt 2) r z jt r zjk at i zk t a =2 5 o ct a = 125 o c t ype vznom v ma v ? ? ma a a i r at v r v t kvz %/k zmm 1 3) 0.75 5 0.7...0.8 <8 <50 1 -- -- -- -0.26...-0.23 z mm 2v0 2.0 5 1.80...2.15 <85 <600 1 <100 <200 1 -0.09...-0.06 z mm 2v2 2.2 5 2.08...2.33 <85 <600 1 <75 <160 1 -0.09...-0.06 z mm 2v4 2.4 5 2.28...2.56 <85 <600 1 <50 <100 1 -0.09...-0.06 z mm 2v7 2.7 5 2.5...2.9 <85 <600 1 <10 <50 1 -0.09...-0.06 z mm 3v0 3.0 5 2.8...3.2 <85 <600 1 <4 <40 1 -0.08...-0.05 z mm 3v3 3.3 5 3.1...3.5 <85 <600 1 <2 <40 1 -0.08...-0.05 z mm 3v6 3.6 5 3.4...3.8 <85 <600 1 <2 <40 1 -0.08...-0.05 z mm 3v9 3.9 5 3.7...4.1 <85 <600 1 <2 <40 1 -0.08...-0.05 z mm 4v3 4.3 5 4.0...4.6 <75 <600 1 <1 <20 1 -0.06...-0.03 z mm 4v7 4.7 5 4.4...5.0 <60 <600 1 <0.5 <10 1 -0.05...+0.02 z mm 5v1 5.1 5 4.8...5.4 <35 <550 1 <0.1 <2 1 -0.02...+0.02 z mm 5v6 5.6 5 5.2...6.0 <25 <450 1 <0.1 <2 1 -0.05...+0.05 z mm 6v2 6.2 5 5.8...6.6 <10 <200 1 <0.1 <2 2 0.03...0.06 z mm 6v8 6.8 5 6.4...7.2 <8 <150 1 <0.1 <2 3 0.03...0.07 z mm 7v5 7.5 5 7.0...7.9 <7 <50 1 <0.1 <2 5 0.03...0.07 z mm 8v2 8.2 5 7.7...8.7 <7 <50 1 <0.1 <2 6.2 0.03...0.08 z mm 9v1 9.1 5 8.5...9.6 <10 <50 1 <0.1 <2 6.8 0.03...0.09 z mm 10 10 5 9.4...10.6 <15 <70 1 <0.1 <2 7.5 0.03...0.1 z mm 11 11 5 10.4...11.6 <20 <70 1 <0.1 <2 8.2 0.03...0.11 z mm 12 12 5 11.4...12.7 <20 <90 1 <0.1 <2 9.1 0.03...0.11 z mm 13 13 5 12.4...14.1 <26 <110 1 <0.1 <2 10 0.03...0.11 z mm 15 15 5 13.8...15.6 <30 <110 1 <0.1 <2 11 0.03...0.11 z mm 16 16 5 15.3...17.1 <40 <170 1 <0.1 <2 12 0.03...0.11 z mm 18 18 5 16.8...19.1 <50 <170 1 <0.1 <2 13 0.03...0.11 z mm 20 20 5 18.8...21.2 <55 <220 1 <0.1 <2 15 0.03...0.11 z mm 22 22 5 20.8...23.3 <55 <220 1 <0.1 <2 16 0.04...0.12 z mm 24 24 5 22.8...25.6 <80 <220 1 <0.1 <2 18 0.04...0.12 z mm 27 27 5 25.1...28.9 <80 <220 1 <0.1 <2 20 0.04...0.12 z mm 30 30 5 28...32 <80 <220 1 <0.1 <2 22 0.04...0.12 z mm 33 33 5 31...35 <80 <220 1 <0.1 <2 24 0.04...0.12 z mm 36 36 5 34...38 <80 <220 1 <0.1 <2 27 0.04...0.12 z mm 39 39 2.5 37...41 <90 <500 0.5 <0.1 <5 30 0.04...0.12 z mm 43 43 2.5 40...46 <90 <500 0.5 <0.1 <5 33 0.04...0.12 z mm 47 47 2.5 44...50 <110 <600 0.5 <0.1 <5 36 0.04...0.12 z mm 51 51 2.5 48...54 <125 <700 0.5 <0.1 <10 39 0.04...0.12 z mm 56 56 2.5 52...60 <135 <700 0.5 <0.1 <10 43 0.04...0.12 z mm 62 62 2.5 58...66 <150 <1000 0.5 <0.1 <10 47 0.04...0.12 z mm 68 68 2.5 64...72 <200 <1000 0.5 <0.1 <10 51 0.04...0.12 z mm 75 75 2.5 70...79 <250 <1000 0.5 <0.1 <10 56 0.04...0.12 1) tested with pulses t p = 20 ms. 2) the zmm1 is a silicon diode with operation in forward direct ion. hence, the index of all parameters should be ?f? instead of ?z?. connect the cathode electrode to the negative pole. a ll data sheet.com
0 0 10 20 vz 40 30 zmm 36 zm m 15 test current iz 5ma 10 20 iz zmm 1 2 b reakdown characteristics t j = c onstant (pulsed) ma 30 0 01 zmm 10 24 3 zmm 27 zmm 18 zmm 22 zmm 33 57 6 vz tj=2 5 c zmm... o 81 0 9 zmm 3.3 zmm 3.9 te st current iz 5ma 20 10 30 b reakdown characteristics t j = c onstant (pulsed) iz 40 50 ma zmm 1 o tj=25 c zmm 2.7 zmm 8.2 zmm 5.6 zmm 4.7 zmm... v v zmm 6.8 zmm 1...zmm75 a ll data sheet.com
zmm 1...zmm75 forward charac teristics ma i f v f 10 10 10 1 10 10 10 10 10 0 0.2 0.4 0.6 0.8 1 v 3 2 -1 -2 -3 -4 -5 tj =100 c o tj =25 c o admissible power dissipation versus ambient temperature vali d provided that electrodes are kept at ambient temperature. zmm... zmm... 500 400 300 200 100 0 0 100 200 c t am b p tot mw o zmm 51 test current iz 5ma 0 10 0 2 6 4 8 iz 20 30 40 50 60 vz 80 70 90 100 v zmm 43 bre akdown characteristics t j = constant (pulsed) ma 10 tj=25 c o zm m 39 zmm 47 zmm... a ll data sheet.com

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